Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 547-550

  Gallas, B ^a   Hartmann, J M ^a   Berbezier, I ^b   Abdallah, M ^b   Zhang, J ^a   Harris, J J ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CROSS-HATCH PATTERNS; GRADED LAYERS; THREADING DISLOCATIONS;

MOLECULAR BEAM EPITAXY;

EID: 0032639394     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01415-8     Document Type: Article

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