SCOPUS 정보 검색 플랫폼

MRS Bulletin

Volumn 21, Issue 4, 1996, Pages 38-44

The effect of strain on the formation of dislocations at the SiGe/Si interface

(1) LeGoues, F K a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; EFFECTS; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; STRESS RELAXATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MISMATCH; MODIFIED FRANK-READ MECHANISM; SINGLE FORMATION THEORY; STRAIN EFFECTS;

DISLOCATIONS (CRYSTALS);

EID: 0030125305 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/S0883769400035326 Document Type: Article

Times cited : (55)

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