Self-limiting segregation and incorporation during boron doping of Si and SiGe

Semiconductor Science and Technology

Volumn 14, Issue 2, 1999, Pages 198-206

  Berbezier, I ^a,b   Gallas, B ^a,b   Fernandez, J ^a   Joyce, B ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING SILICON;

EID: 0033076605     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/2/015     Document Type: Article

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