Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 515-518

  Serpentini, M ^a   Souifi, A ^a   Abdallah, M ^b   Berbezier, I ^b   Bremond, G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b Cent de Recherche sur les Mecanismes   (France)

Author keywords

Ge island; Photoluminescence; Type II interface

Indexed keywords

EID: 0010438467     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00165-3     Document Type: Article

References (11)

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