The physical origin of the two-dimensional towards three-dimensional coherent epitaxial Stranski-Krastanov transition

Applied Surface Science

Volumn 102, Issue , 1996, Pages 6-11

  Muller P ^a   Kern, R ^a  

^a Lyon I University   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELASTICITY; EPITAXIAL GROWTH; FILM GROWTH; NUMERICAL ANALYSIS; SEMICONDUCTING GERMANIUM; WETTING;

BAUER'S CRITERION; ELASTIC MISFIT ENERGY; ELASTIC STRICTION ENERGY; EPITAXIAL THREE DIMENSIONAL LAYER GROWTH; EPITAXIAL TWO DIMENSIONAL LAYER GROWTH; SINGLE LAYER ISLAND; STRANSKI KRASTANOV GROWTH MODE; TWO DIMENSIONAL TO THREE DIMENSIONAL LAYER GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030564903     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00009-8     Document Type: Article

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