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Volumn 412-413, Issue , 1998, Pages 415-429

Dependence of SiGe growth instability on Si substrate orientation

Author keywords

Curved surfaces; Electron microscopy; Heterojunctions; Molecular beam epitaxy; Scanning transmission electron microscopy (STEM); Silicon germanium; single crystal surfaces; Transmission high energy electron diffraction

Indexed keywords

CRYSTAL ORIENTATION; HIGH RESOLUTION ELECTRON MICROSCOPY; MATHEMATICAL MODELS; MORPHOLOGY; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

EID: 0032165444     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00461-0     Document Type: Article
Times cited : (31)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.