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Applied Physics A: Materials Science and Processing

Volumn 71, Issue 4, 2000, Pages 423-432

Size distribution and optical properties of self-assembled Ge on Si

(9) Vescan, L a Goryll, M a Stoica, T b Gartner, P b Grimm, K a Chretien, O a Mateeva, E c Dieker, C d Hollander B a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

c Department of Geology and Geological Engineering (United States)

d UNIVERSITY OF KIEL (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ELECTROLUMINESCENCE; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICON WAFERS;

ADATOMS;

SEMICONDUCTING GERMANIUM;

EID: 0034288613 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000555 Document Type: Article

Times cited : (24)

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