Material Engineering of High-k Gate Dielectrics

Dielectric Films for Advanced Microelectronics

Volumn , Issue , 2007, Pages 297-336

  Toriumi, Akira ^a,b   Kita, Koji ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dielectric permittivity of high k insulators; HfO2 based ternary oxides; HfO2 Si IL oxidation mechanism; Higher quality and or higher k dielectrics; Interface layer properties; Lattice vibration; Modulating ionic polarizability; Silicon process technology

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LATTICE VIBRATIONS; PERMITTIVITY;

HIGH-K INSULATORS; INTERFACE LAYER; IONIC POLARIZABILITIES; K DIELECTRICS; OXIDATION MECHANISMS; SILICON PROCESS TECHNOLOGY; TERNARY OXIDES;

GATE DIELECTRICS;

EID: 84950311949     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470017944.ch7     Document Type: Chapter

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