Study of atomically-flat SiO2/Si interface formation mechanism, based on the radical oxidation kinetics

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 71-74

  Itoh, H ^a   Nagamine, M ^a   Satake, H ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA;

RADICAL OXIDATION KINETICS;

SEMICONDUCTING FILMS;

EID: 0033190153     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00341-X     Document Type: Article

References (4)

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2. N. Nagamine, et al., in IEDM Tech. Dig., P.593 (1998).
3. A. S. Grove, "Physics and Technology of Semiconductor Devices", (John Wiley & Sons, Inc.) pp.23-31 (1967).
4. A. H. Carim and R. Sinclair, J. Electro. Chem. Soc., 134, p. 741 (1987).