Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1975-1977

  Xu, Zhen ^a   Houssa, Michel ^b   De Gendt, Stefan ^a   Heyns, Marc ^a  

^a IMEC   (Belgium)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; GATE DIELECTRIC STACKS; GATE VOLTAGES; POLARITY EFFECT; SHALLOW TRAPS; TEMPERATURE DEPENDENCE; TRAP DEPTH;

DIELECTRIC MATERIALS; GATE DIELECTRICS; SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION;

HAFNIUM OXIDES;

EID: 79956031814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435411     Document Type: Article

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