Infrared absorption study of HfO2 and HfO2/Si interface ranging from 200cm-1 to 2000cm-1

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 319-324

  Tomida, Kazuyuki ^a   Shimizu, Haruka ^a   Kita, Koji ^a   Kyuno, Kentaro ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; INTERFACES (MATERIALS); MOSFET DEVICES; PHONONS; SILICA; SILICON; THERMAL EFFECTS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COORDINATION NUMBER; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY (FTIR); IONIC BONDING; LATTICE MISMATCH;

HAFNIUM COMPOUNDS;

EID: 12744271552     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d10.9     Document Type: Conference Paper

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