Fermi level pinning engineering by Al compositional modulation and doped partial suicide for HfAlOx(N) CMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 70-71

  Kadoshima, M ^a   Ogawa, A ^a   Takahashi, M ^a   Ota, H ^a   Mise, N ^a   Iwamoto, K ^a   Migita, S ^a   Fujiwara, H ^a   Satake, H ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC POTENTIAL; FERMI LEVEL; INTERFACES (MATERIALS); MODULATION; MOSFET DEVICES;

COMPOSITIONAL MODULATION; FERMI-LEVEL PINNING; WORK FUNCTION;

CMOS INTEGRATED CIRCUITS;

EID: 29244456693     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469216     Document Type: Conference Paper

References (7)

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2. C. Hobbs et al., VLSI, 2003, p. 9.
3. M. Koyama et al., IEDM, 2004, p. 499.
4. E. Cartier et al., VLSI, 2004, p. 44.
5. T. Nabatame et al., VLSI, 2003, p. 25.
6. K. Iwamoto et al., IWDTF, 2004, p. 15.
7. J. Kedzierski et al., IEDM, 2002, p. 247.