Performance improvement of n-MOSFETs with constituent gradient HfO 2/SiO2 interface

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 202-205

  Iwamoto, K ^a   Ogawa, A ^a   Nabatame, T ^a   Satake, H ^a   Toriumi, A ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Effective electron mobility; Gate leakage current; HfO2; High k dielectrics; SiO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; SILICA;

EFFECTIVE ELECTRON MOBILITY; GATE LEAKAGE CURRENT; HFO2; HIGH-K DIELECTRICS; SIO2;

MOSFET DEVICES;

EID: 19944404768     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.073     Document Type: Conference Paper

References (4)

1. N. Yasuda, H. Hisamatsu, H. Ota, K. Iwamoto, K. Tominaga, K. Yamamoto, W. Mizubayashi, N. Yamagishi, M. Ohno, S. Migita, Y. Morita, T. Horikawa, T. Nabatame, and A. Toriumi Ext. Abst. of Solid State Device and Materials 2003 50
2. T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisatamtsu, T. Yasuda, K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T. Horikawa and A. Toriumi, Digest of Technical papers of 2003 Symposium on VLSI Technology, p. 25 (2003).
3. M. Yamaoka, A. Ohta, and S. Miyazaki Ext. Abst. of Solid State Device and Materials 2003 810
4. H. Takeuchi, and T.J. King Appl. Phys. Lett. 83 2003 788