Doped HfO2 for hIGHER-k dielectrics

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 185-197

  Toriumi, A ^a   Kita, K ^a   Tomida, K ^a   Yamamoto, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845234450     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209268     Document Type: Conference Paper

References (10)

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9. Y. Yamamoto, K. Kita and A. Toriumi, "Permittivity Property of HfCeOx Investigated From MIM Structures," Extended Abstracts (The 66th Autumn Meeting, 2005) ; The Japan Society of Applied Physics, No.2, p.691 (2005) (in Japanese).
10. 3-Based Ternary Higher-k Dielectrics," Ext. Abst. Interntional Conference on Solid State Devices and Materials (SSDM), pp.252-253 (2005, Kobe).