Correlated electron materials and field effect transistors for logic: A review

Critical Reviews in Solid State and Materials Sciences

Volumn 38, Issue 4, 2013, Pages 286-317

  Zhou, You ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Anderson localization; complex oxides; correlated electrons; device; field effect; metal insulator transition; oxide interfaces; transistor

Indexed keywords

ANDERSON LOCALIZATION; COMPLEX OXIDES; CORRELATED ELECTRONS; DEVICE; FIELD EFFECTS; OXIDE INTERFACES;

DATA PROCESSING; ELECTRONIC PROPERTIES; ELECTROSTATICS; FERROELECTRIC MATERIALS; IONIC LIQUIDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

MOSFET DEVICES;

EID: 84882300303     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408436.2012.719131     Document Type: Article

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