Field-effect modulation of the transport properties of nondoped SrTiO 3

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Shibuya, Keisuke ^a   Ohnishi, Tsuyoshi ^a,d   Uozumi, Takayuki ^a   Sato, Taisuke ^a   Lippmaa, Mikk ^a,d   Kawasaki, Masashi ^b,d,e   Nakajima, Kiyomi ^c,d   Chikyow, Toyohiro ^c,d   Koinuma, Hideomi ^c,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Combinatorial Materials Exploration and Technology ^*  (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; METAL INSULATOR TRANSITION; STRONTIUM COMPOUNDS;

FIELD EFFECT DOPING; FIELD EFFECT MOBILITY; SINGLE CRYSTAL FIELD-EFFECT TRANSISTORS; SRTI O3 (100);

SINGLE CRYSTALS;

EID: 33744549070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207502     Document Type: Article

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