Enhancement-mode gaAs n-channel MOSFET

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 959-962

  Rajagopalan, Karthik ^a   Abrokwah, Jonathan ^a   Droopad, Ravi ^a   Passlack, Matthias ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Compound semiconductor; Enhancement mode; GaAs; High mobility channel; MOSFETs

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHANNEL MOBILITY; DIELECTRIC STACK THICKNESS; HIGH-MOBILITY CHANNEL; SATURATION CURRENT; SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 33847404778     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886319     Document Type: Article

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