Room-temperature oxide field-effect transistor with buried channel

Applied Physics Letters

Volumn 76, Issue 24, 2000, Pages 3632-3634

  Misewich, J A ^a   Schrott, A G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001761275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126730     Document Type: Article

References (14)

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