Field-effect devices utilizing LaAlO 3-SrTiO 3 interfaces

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Forg B ^a   Richter, C ^a,b   Mannhart, J ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CURRENT GAINS; DRAIN-SOURCE CHANNELS; ELECTRON LIQUIDS; FIELD-EFFECT DEVICES; GATE VOLTAGES; SRTIO; VOLTAGE GAIN;

GATE DIELECTRICS; STRONTIUM TITANATES;

LANTHANUM ALLOYS;

EID: 84857024922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3682102     Document Type: Article

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