Probing the metal-insulator transition of NdNiO3 by electrostatic doping

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Son, Junwoo ^a   Jalan, Bharat ^a   Kajdos, Adam P ^a   Balents, Leon ^b   James Allen, S ^b   Stemmer, Susanne ^a  

^a Santa Barbara   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLINGS; BAND INSULATORS; CHEMICAL DOPING; EPITAXIALLY GROWN; LATTICE DISTORTIONS; SRTIO; THEORETICAL MODELS; THEORETICAL PREDICTION; ULTRA-THIN;

CARRIER CONCENTRATION; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; ULTRATHIN FILMS;

METAL INSULATOR TRANSITION;

EID: 81155144611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659310     Document Type: Article

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