Field-induced carrier delocalization in the strain-induced mott insulating state of an organic superconductor

Physical Review Letters

Volumn 103, Issue 11, 2009, Pages

  Kawasugi, Yoshitaka ^a,b   Yamamoto, Hiroshi M ^a   Tajima, Naoya ^b   Fukunaga, Takeo ^b   Tsukagoshi, Kazuhito ^c   Kato, Reizo ^a,b  

^a SAITAMA UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEDT-TTF; CARRIER DOPING; DC RESISTANCE; DELOCALIZATIONS; EFFECTIVE MOBILITIES; FIELD EFFECTS; FIELD-INDUCED CARRIERS; GATE VOLTAGES; HALL COEFFICIENT; HOLE CARRIERS; MOTT-INSULATING STATE; ORGANIC SUPERCONDUCTOR; VOLTAGE DEPENDENCE;

GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE MOBILITY; ORGANIC CONDUCTORS; ORGANIC SUPERCONDUCTING MATERIALS; SEMICONDUCTING ORGANIC COMPOUNDS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY;

FIELD EFFECT TRANSISTORS;

EID: 69949181062     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.116801     Document Type: Article

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