Critical behavior of the conductivity of Si:P at the metal-insulator transition under uniaxial stress

Physical Review Letters

Volumn 83, Issue 15, 1999, Pages 3005-3008

  Waffenschmidt, S ^a   Pfleiderer, C ^a   Lohneysen H V ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CORRELATION METHODS; ELECTRIC CONDUCTIVITY MEASUREMENT; EXTRAPOLATION; MATHEMATICAL MODELS; PHOSPHORUS; SILICON; STRESS ANALYSIS;

CORRELATION LENGTH EXPONENT; DYNAMIC CRITICAL EXPONENT;

METAL INSULATOR BOUNDARIES;

EID: 13044272920     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.3005     Document Type: Article

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