Limits on vanadium oxide Mott metal-insulator transition field-effect transistors

Solid-State Electronics

Volumn 54, Issue 6, 2010, Pages 654-659

  Hormoz, S ^a   Ramanathan, S ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Functional oxides; Phase transitions; Transistors

Indexed keywords

BREAKDOWN FIELD; CRITICAL ELECTRIC FIELD; FIELD INDUCED; FREE CARRIER CONCENTRATION; FUNCTIONAL OXIDES; IN-FIELD; LOWER BOUNDS; METAL-OXIDE; MOSFETS; ORDERS OF MAGNITUDE; POWER TRANSFERS; SCALING LIMITATION; SCALING LIMITS; SIMPLE MODEL; SWITCHING ENERGY; SWITCHING SPEED; SWITCHING TIME; THERMAL DISSIPATION; TRANSIT TIME; VANADIUM OXIDES;

CARRIER CONCENTRATION; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; METAL INSULATOR BOUNDARIES; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 77950296471     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.006     Document Type: Article

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