Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

  Asanuma, S ^a,b   Xiang, P H ^a,b   Yamada, H ^a   Sato, H ^a,b   Inoue, I H ^a,b   Akoh, H ^a,b   Sawa, A ^a,b   Ueno, K ^c   Shimotani, H ^d   Yuan, H ^d   Kawasaki, M ^c,e   Iwasa, Y ^d,e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DOUBLE LAYER; ELECTRON MATERIALS; ELECTROSTATIC CONTROL; LARGE EFFECTIVE; METAL INSULATOR TRANSITION TEMPERATURE; NEGATIVE GATE VOLTAGES; ORDER OF MAGNITUDE; RESISTIVITY CHANGES;

HOLE CONCENTRATION; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 77958036049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3496458     Document Type: Article

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