Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 425-427

  Shibuya, Keisuke ^a   Ohnishi, Tsuyoshi ^a,d   Lippmaa, Mikk ^a,d   Kawasaki, Masashi ^b,d,e   Koinuma, Hideomi ^c,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Tokyo Institute of Technology ^*  (Japan)

^d Combinatorial Mat Explor/Technol ^*  (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; ELECTRONIC STRUCTURE; OXIDES; PHASE TRANSITIONS; SINGLE CRYSTALS; STRONTIUM COMPOUNDS;

EPITAXIAL LAYERS; FERROELECTRIC FIELD EFFECT; GATE INSULATORS; WIDE-GAP INSULATORS;

FIELD EFFECT TRANSISTORS;

EID: 4043102480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773361     Document Type: Article

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