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Volumn 73, Issue 6, 1998, Pages 780-782

Mott transition field effect transistor

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001049510     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121999     Document Type: Article
Times cited : (206)

References (33)
  • 2
    • 21944441959 scopus 로고    scopus 로고
    • USA Patent disclosure No. Y0895-0318 (1996)
    • D. M. Newns, J. Misewich, and C. Zhou, USA Patent disclosure No. Y0895-0318 (1996).
    • Newns, D.M.1    Misewich, J.2    Zhou, C.3
  • 4
    • 0006007352 scopus 로고
    • Y. Tokura, Physica C 235-240, 138 (1994);
    • (1994) Physica C , vol.235-240 , pp. 138
    • Tokura, Y.1
  • 24
    • 21944441552 scopus 로고    scopus 로고
    • x,y orbitals are considered to form an effective single band model
    • x,y orbitals are considered to form an effective single band model.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.