SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

Studies on room-temperature electric-field effect in ionic-liquid gated VO 2 three-terminal devices

(3) Yang, Zheng a Zhou, You a Ramanathan, Shriram a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCE; DOUBLE LAYERS; FIELD-EFFECT; GATE BIAS; HALL MEASUREMENTS; HIGH TEMPERATURE; IN-CHANNELS; LITHOGRAPHIC PATTERNING; METALLIC STATE; MULTIPLE TRANSITIONS; NEGATIVE BIAS; POLARITY DEPENDENCE; RESISTANCE MODULATION; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THREE-TERMINAL DEVICES;

GATE DIELECTRICS; GOLD; IONIC LIQUIDS; SAPPHIRE; THIN FILMS;

ELECTRIC FIELD EFFECTS;

EID: 84862294617 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3665399 Document Type: Article

Times cited : (60)

References (9)

1
- 77953623513
- 10.1063/1.3408899
- D. Ruzmetov, G. Gopalakrishnan, C. Ko, V. Narayanamurti, and S. Ramanathan, J. Appl. Phys. 107 (11), 114516 (2010). 10.1063/1.3408899
- (2010) J. Appl. Phys. , vol.107 , Issue.11 , pp. 114516
- Ruzmetov, D.¹ Gopalakrishnan, G.² Ko, C.³ Narayanamurti, V.⁴ Ramanathan, S.⁵

2
- 84860388949
- 10.1063/1.3624896
- S. Sengupta, K. Wang, K. Liu, A. K. Bhat, S. Dhara, J. Wu, and M. M. Deshmukh, Appl. Phys. Lett. 99, 062114 (2011). 10.1063/1.3624896
- (2011) Appl. Phys. Lett. , vol.99 , pp. 062114
- Sengupta, S.¹ Wang, K.² Liu, K.³ Bhat, A.K.⁴ Dhara, S.⁵ Wu, J.⁶ Deshmukh, M.M.⁷

3
- 0001049510
- Mott transition field effect transistor
- DOI 10.1063/1.121999, PII S0003695198001326
- D. M. Newns, J. A. Misewich, C. C. Tsuei, A. Gupta, B. A. Scott, and A. Schrott, Appl. Phys. Lett. 73 (6), 780 (1998). 10.1063/1.121999 (Pubitemid 128673914)
- (1998) Applied Physics Letters , vol.73 , Issue.6 , pp. 780-782
- Newns, D.M.¹ Misewich, J.A.² Tsuei, C.C.³ Gupta, A.⁴ Scott, B.A.⁵ Schrott, A.⁶

4
- 33846941890
- 10.1063/1.2437663
- A. F. Hebard, R. Misra, and M. McCarthy, Appl. Phys. Lett. 90 (5), 052905 (2007). 10.1063/1.2437663
- (2007) Appl. Phys. Lett. , vol.90 , Issue.5 , pp. 052905
- Hebard, A.F.¹ Misra, R.² McCarthy, M.³

5
- 54949147849
- 10.1038/nmat2298
- K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa, and M. Kawasaki, Nat. Mater. 7 (11), 855 (2008). 10.1038/nmat2298
- (2008) Nat. Mater. , vol.7 , Issue.11 , pp. 855
- Ueno, K.¹ Nakamura, S.² Shimotani, H.³ Ohtomo, A.⁴ Kimura, N.⁵ Nojima, T.⁶ Aoki, H.⁷ Iwasa, Y.⁸ Kawasaki, M.⁹

6
- 78650392857
- 10.1002/adma.201003241
- R. Scherwitzl, P. Zubko, I. G. Lezama, S. Ono, A. F. Morpurgo, G. Catalan, and J. M. Triscone, Adv. Mater. 22 (48), 5517 (2010). 10.1002/adma.201003241
- (2010) Adv. Mater. , vol.22 , Issue.48 , pp. 5517
- Scherwitzl, R.¹ Zubko, P.² Lezama, I.G.³ Ono, S.⁴ Morpurgo, A.F.⁵ Catalan, G.⁶ Triscone, J.M.⁷

7
- 77958036049
- 10.1063/1.3496458
- S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa, Appl. Phys. Lett. 97 (14), 142110 (2010). 10.1063/1.3496458
- (2010) Appl. Phys. Lett. , vol.97 , Issue.14 , pp. 142110
- Asanuma, S.¹ Xiang, P.H.² Yamada, H.³ Sato, H.⁴ Inoue, I.H.⁵ Akoh, H.⁶ Ueno, K.⁷ Shimotani, H.⁸ Yuan, H.⁹ Kawasaki, M.¹⁰ Iwasa, Y.¹¹

8
- 0012151439
- 10.1103/PhysRevB.7.2109
- W. H. Rosevear and W. Paul, Phys. Rev. B 7 (5), 2109 (1973). 10.1103/PhysRevB.7.2109
- (1973) Phys. Rev. B , vol.7 , Issue.5 , pp. 2109
- Rosevear, W.H.¹ Paul, W.²

9
- 67650514247
- 10.1103/PhysRevB.79.153107
- D. Ruzmetov, D. Heiman, B. B. Claflin, V. Narayanamurti, and S. Ramanathan, Phys. Rev. B 79 (15), 153107 (2009). 10.1103/PhysRevB.79.153107
- (2009) Phys. Rev. B , vol.79 , Issue.15 , pp. 153107
- Ruzmetov, D.¹ Heiman, D.² Claflin, B.B.³ Narayanamurti, V.⁴ Ramanathan, S.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.