메뉴 건너뛰기




Volumn 79, Issue 15, 2009, Pages

Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition

Author keywords

[No Author keywords available]

Indexed keywords


EID: 67650514247     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.153107     Document Type: Article
Times cited : (139)

References (24)
  • 8
    • 0343833400 scopus 로고    scopus 로고
    • 10.1016/S0921-4534(00)00469-X
    • H. T. Kim, Physica C 341-348, 259 (2000). 10.1016/S0921-4534(00)00469-X
    • (2000) Physica C , vol.341-348 , pp. 259
    • Kim, H.T.1
  • 13
    • 19744369983 scopus 로고
    • 10.1063/1.1656559
    • D. H. Hensler, J. Appl. Phys. 39, 2354 (1968). Carrier density was estimated from n=1/ RH e. 10.1063/1.1656559
    • (1968) J. Appl. Phys. , vol.39 , pp. 2354
    • Hensler, D.H.1
  • 15
    • 0012151439 scopus 로고
    • 10.1103/PhysRevB.7.2109
    • W. H. Rosevear and W. Paul, Phys. Rev. B 7, 2109 (1973). 10.1103/PhysRevB.7.2109
    • (1973) Phys. Rev. B , vol.7 , pp. 2109
    • Rosevear, W.H.1    Paul, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.