30 nm In0.7Ga0.3as inverted-type HEMTs with reduced gate leakage current for logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Kim, Tae Woo ^a   Kim, Dae Hyun ^a   Del Alamo, Jesus A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATED DEVICE; FREQUENCY CHARACTERISTIC; GATE-LEAKAGE CURRENT; HIGH FREQUENCY CHARACTERISTICS; LOGIC APPLICATIONS;

ELECTRON DEVICES; FABRICATION; GALLIUM; HIGH ELECTRON MOBILITY TRANSISTORS; SCALABILITY;

LEAKAGE CURRENTS;

EID: 77952389541     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424317     Document Type: Conference Paper

References (9)

1. S. Datta et al., IEDM, p. 763, 2005.
2. K. M. Lau et al., IEDM, p. 723, 2008.
3. D.-H. Kim et al., IPRM, p. 132 , 2009.
4. N. Neophytou et al., IEEE TED, p. 1377, 2009.
5. D.-H. Kim et al., IEEE TED, p. 2546 , 2008.
6. D.-H. Kim et al., IEEE EDL, p. 830 , 2008.
7. D.-H. Kim et al., IEEE TED, p. 2606, 2007.
8. D. R. Greenberg et al., IEEE TED, p. 1304, 1996.
9. N. Pan et al., Applied Physics Letters, p. 71, 1991.