Electrostatic modification of novel materials

Reviews of Modern Physics

Volumn 78, Issue 4, 2006, Pages 1185-1212

  Ahn, C H ^a   Bhattacharya, A ^b   Di Ventra, M ^c   Eckstein, J N ^d   Frisbie, C Daniel ^e   Gershenson, M E ^f   Goldman, A M ^e   Inoue, I H ^g   Mannhart, J ^h   Millis, Andrew J ⁱ   Morpurgo, Alberto F ^j   Natelson, Douglas ^k   Triscone, Jean Marc ^l  

^a Yale University   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d University of Illinois at Urbana Champaign   (United States)

^e University of Minnesota   (United States)

^f RUTGERS UNIVERSITY   (United States)

^g NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^h UNIVERSITY OF AUGSBURG   (Germany)

ⁱ Columbia University ^*  (United States)

^j DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^k RICE UNIVERSITY   (United States)

^l UNIVERSITY OF GENEVA MEDICAL SCHOOL   (Switzerland)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL MODIFICATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; GROUND STATE; MAGNETIC PROPERTIES; MICROELECTRONICS;

COMPLEX OXIDES; ELECTROSTATIC DOPING; ELECTROSTATIC MODIFICATION; QUANTUM CRITICAL BEHAVIOR;

FIELD EFFECT TRANSISTORS;

EID: 33750934566     PISSN: 00346861     EISSN: 15390756     Source Type: Journal    
DOI: 10.1103/RevModPhys.78.1185     Document Type: Article

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