A field effect transistor based on the Mott transition in a molecular layer

Applied Physics Letters

Volumn 70, Issue 5, 1997, Pages 598-600

  Zhou, C ^a   Newns, D M ^a   Misewich, J A ^a   Pattnaik, P C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MOLECULES; ORGANIC CONDUCTORS; SWITCHING;

ENHANCEMENT MODE DEVICE; GATE VOLTAGE; GRADUAL CHANNEL APPROXIMATION; MOTT TRANSITION; MOTT-HUBBARD INSULATORS;

FIELD EFFECT TRANSISTORS;

EID: 0031550501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118285     Document Type: Article

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