Field-effect transistor based on KTaO3 perovskite

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3726-3728

  Ueno, K ^a,b   Inoue, I H ^a   Yamada, T ^a   Akoh, H ^a   Tokura, Y ^a,b   Takagi, H ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONAL OXIDES; OXIDE ELECTRONICS; ROOM TEMPERATURE; SEMICONDUCTOR PARAMETRIC ANALYZERS;

ALUMINA; ELECTRIC INSULATORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); PEROVSKITE; POTASSIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS; SOLID STATE DEVICES; SPUTTERING; SUBSTRATES; THIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 2942521650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1703841     Document Type: Article

References (10)

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