Solution processed Ni-doped TiO2 p-type channel in field effect transistor assembly with <10 nm thin Ba0.5 Sr0.5 TiO3 dielectric layer

Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

  Das, Soumen ^a   Kim, Jin Hwan ^a   Park, Yong Kyu ^a   Hahn, Yoon Bong ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; DEVICE RESPONSE; DIELECTRIC LAYER; FIELD EFFECT TRANSISTOR STRUCTURES; HOLE DIFFUSION; LOW-LEAKAGE CURRENT; NI-DOPED; OFF-STATE CURRENT; P-TYPE; SOLUTION-PROCESSED; TIO;

BARIUM; HETEROJUNCTIONS; HOLE MOBILITY; TITANIUM DIOXIDE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957570022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592736     Document Type: Article

References (24)

1. T. I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, and M. Kawasaki, Adv. Mater. (Weinheim, Ger.) 0935-9648 16, 1887 (2004). 10.1002/adma.200401018
2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 0036-8075 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
3. K. Ueno, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, and H. Takagi, Appl. Phys. Lett. 0003-6951 83, 1755 (2003). 10.1063/1.1605806
4. K. Shibuya, T. Ohnishi, M. Lippmaa, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 0003-6951 85, 425 (2004). 10.1063/1.1773361
5. K. Ueno, I. H. Inoue, T. Yamada, H. Akoh, Y. Tokura, and H. Takagi, Appl. Phys. Lett. 0003-6951 84, 3726 (2004). 10.1063/1.1703841
6. G. Shen and D. Chen, Science of Advanced Materials 1468-6996 1, 213 (2009).
7. M. Katayama, S. Ikesaka, J. Kuwano, Y. Yamamoto, H. Koinuma, and Y. Matsumoto, Appl. Phys. Lett. 0003-6951 89, 242103 (2006). 10.1063/1.2404980 (Pubitemid 44974923)
8. F. Odobel, L. L. Pleux, Y. Pellegrin, and E. Blart, Acc. Chem. Res. 0001-4842 43, 1063 (2010). 10.1021/ar900275b
9. S. Das S. H. Kim, Y. K. Park, C. M. Choi, D. Y. Kim, and Y. B. Hahn, Mater. Chem. Phys. 0254-0584 124, 704 (2010). 10.1016/j.matchemphys.2010.07.040
10. A. Ruiz, A. Cornet, G. Sakai, K. Shimanoe, J. R. Morante, and N. Yamazoe, Chem. Lett. 0366-7022 31, 892 (2002). 10.1246/cl.2002.892
11. L. C. Liau and C. C. Lin, Thin Solid Films 0040-6090 516, 1998 (2008). 10.1016/j.tsf.2007.06.025 (Pubitemid 351174186)
12. J. Domaradzki and D. Kaczmarek, Thin Solid Films 0040-6090 516, 1473 (2008). 10.1016/j.tsf.2007.05.044 (Pubitemid 351172389)
13. D. J. Mowbray, J. I. Martinez, J. M. García Lastra, K. S. Thygesen, and K. W. Jacobsen, J. Phys. Chem. C 1932-7447 113, 12301 (2009). 10.1021/jp904672p
14. Z. -F. Zhang, Z. -B Deng, C. -J. Liang, M. -X Zhang, and D. -H. Xu, Displays 0141-9382 24, 231 (2003). 10.1016/j.displa.2004.01.010
15. S. A. Haque, S. Koops, N. Tokmoldin, J. R. Durrant, J. Huang, D. D. C. Bradley, and E. A. Palomares, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 683 (2007). 10.1002/adma.200601619 (Pubitemid 46932834)
16. R. Könenkamp, R. C. Word, and M. Godinez, Nanotechnology 0957-4484 17, 1858 (2006). 10.1088/0957-4484/17/8/008
17. L. Hou, P. Liu, Y. Li, and C. Wu, Thin Solid Films 0040-6090 517, 4926 (2009). 10.1016/j.tsf.2009.03.017
18. T. H. T. Aziz, M. M. Salleh, and M. Yahaya, Solid State Sci. Tech. 0128-7389 15, 75 (2007).
19. X. Y. Fang, O. K. Tan, Q. Wei, M. W. Yao, and S. C. Tjin, Sens. Actuators B 0925-4005 119, 78 (2006). 10.1016/j.snb.2005.11.065 (Pubitemid 44332044)
20. S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, J. Cryst. Growth 0022-0248 293, 43 (2006). 10.1016/j.jcrysgro.2006.03.059 (Pubitemid 44061839)
21. J. Okumu C. Dahmen, A. N. Sprafke, M. Luysberg, G. von Plessen, and M. Wuttig, J. Appl. Phys. 0021-8979 97, 094305 (2005). 10.1063/1.1888044 (Pubitemid 40682727)
22. D. Basu, M. J. Gilbert, and S. K. Banerjee, J. Vac. Sci. Technol. B 1071-1023 24, 2424 (2006). 10.1116/1.2353846
23. N. A. Deskins and M. Dupuis, J. Phys. Chem. C 1932-7447 113, 346 (2009). 10.1021/jp802903c
24. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 1530-6984 3, 149 (2003). 10.1021/nl025875l (Pubitemid 37130527)