High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

Nature Materials

Volumn 1, Issue 4, 2002, Pages 241-246

  Javey, Ali ^a   Kim, Hyoungsub ^b   Brink, Markus ^c   Wang, Qian ^a   Ural, Ant ^a   Guo, Jing ^d   Mcintyre, Paul ^b   Mceuen, Paul ^c   Lundstrom, Mark ^d   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

^c Cornell University   (United States)

^d PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; LOGIC GATES; THIN FILMS; TRANSCONDUCTANCE;

VOLTAGE GAIN;

DIELECTRIC MATERIALS;

CARBON;

ARTICLE; ELECTRICITY; NANOTECHNOLOGY; SEMICONDUCTOR;

CARBON; ELECTRICITY; NANOTECHNOLOGY; TRANSISTORS;

EID: 0036974829     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat769     Document Type: Article

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