Current through Si O2 gate oxide and its low frequency fluctuations: Trapping on charged dangling bonds with negative Hubbard U

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Moyzhes, Boris ^a   Geballe, Theodore H ^a   Jeong, Steve ^b   Gitlin, Daniel ^b   Karp, James ^b  

^a STANFORD UNIVERSITY   (United States)

^b XILINX INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; HOLE TUNNELING; POLARIZATION ENERGY; VOLTAGE STRESSES;

DIELECTRIC LOSSES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONS; FREQUENCIES; LEAKAGE CURRENTS; MOS DEVICES; POLARIZATION;

SILICA;

EID: 17444385954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862768     Document Type: Article

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