Sm2O3 gate dielectric on Si substrate

Materials Science in Semiconductor Processing

Volumn 13, Issue 5-6, 2010, Pages 303-314

  Chin, Wen Chiao ^a   Cheong, Kuan Yew ^a   Hassan, Zainuriah ^b  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Deposition methods; High dielectric; Post deposition annealing; Rare earth oxide; Sm2O3 thin film

Indexed keywords

ALTERNATIVE DIELECTRICS; DEPOSITION METHODS; DOWN-SCALING; HIGH DIELECTRIC CONSTANTS; INTRINSIC PROPERTY; METAL OXIDE SEMICONDUCTOR; POST DEPOSITION ANNEALING; RARE-EARTH OXIDE; SI SUBSTRATES; SI-BASED;

DEPOSITION; DIELECTRIC PROPERTIES; GATE DIELECTRICS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILMS; VAPOR DEPOSITION;

DIELECTRIC MATERIALS;

EID: 82455175255     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.02.001     Document Type: Review

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