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Volumn 96, Issue 11, 2010, Pages

Physical and electrical characteristics of the high-k Ta2 O 5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon

(5) Kao, Chyuan Haur a Chen, Hsiang b Chiu, Jing Sing a Chen, Kung Shao a Pan, Yu Tsung a

a CHANG GUNG UNIVERSITY (Taiwan)

b NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; CRYSTALLIZED FILMS; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; FUTURE GENERATIONS; INTERFACE TRAPS; NON-VOLATILE MEMORIES; OPTIMAL CONDITIONS; POLY-CRYSTALLINE SILICON; TANTALUM PENTOXIDE; THERMAL-ANNEALING;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; POLYSILICON; TANTALUM; TANTALUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77949741117 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3334725 Document Type: Article

Times cited : (31)

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