Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 99-102

  Lopes, J M J ^a,b   Durgun Ozben E ^a,b   Roeckerath, M ^a,b   Littmark, U ^a,b   Luptak R ^a,b   Lenk, St ^a,b   Besmehn, A ^a   Breuer, U ^a   Schubert, J ^a,b   Mantl, S ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JARA Fundamentals of Future Information Technology   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE GATE DIELECTRICS; AMORPHOUS THIN FILMS; HIGH DIELECTRIC CONSTANTS; INTERFACE TRAP DENSITY; LOW-LEAKAGE CURRENT; MOSFETS; STRUCTURAL AND ELECTRICAL PROPERTIES;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; THIN FILMS;

AMORPHOUS FILMS;

EID: 67650651991     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897548     Document Type: Conference Paper

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