Kinetics of interfacial layer formation during deposition of HfO 2 on silicon

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 111-113

  Essary, C ^a   Howard, J M ^a   Craciun, V ^a   Craciun, D ^b   Singh, R K ^a  

^a University of Florida   (United States)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

Hafnium oxide; High k dielectrics; Interfacial layer; Laser ablation; Thin films

Indexed keywords

COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELLIPSOMETRY; INTERFACES (MATERIALS); LASER ABLATION; PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SILICA; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDE; INTERFACIAL LAYERS;

HAFNIUM COMPOUNDS;

EID: 1242332991     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.048     Document Type: Conference Paper

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