Effect of annealing on the structural and electrical properties of high- k Sm2 O3 dielectrics

Electrochemical and Solid-State Letters

Volumn 11, Issue 12, 2008, Pages

  Pan, Tung Ming ^a   Huang, Chun Chin ^a   You, Shi Xian ^a   Yeh, Chih Cheng ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OZONE WATER TREATMENT; REACTIVE SPUTTERING; SAMARIUM; SILICON; SURFACE ROUGHNESS; SURFACE TREATMENT;

DEFECT SITES; ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESSES; FREQUENCY DISPERSIONS; GATE LEAKAGE CURRENTS; INTERFACIAL LAYERS; SAMARIUM OXIDES; SILICON SUBSTRATES; TRAPPED CHARGES;

ANNEALING;

EID: 54949083102     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2990226     Document Type: Article

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