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Volumn 388, Issue 2, 2005, Pages 177-185

Characterisation of oxidised gadolinium film deposited on Si (1 0 0) substrate

Author keywords

Dielectric phenomena; Gadolinium oxide; Insulating films; SCLC mechanism

Indexed keywords

DIELECTRIC PHENOMENA; GADOLINIUM OXIDE; INSULATING FILMS; SCLC MECHANISM;

EID: 11344272232     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.07.019     Document Type: Article
Times cited : (18)

References (58)
  • 20
    • 0004024649 scopus 로고
    • National Laboratory of High Energy Physics, Oho 1-1, Tsukuba 305, Japan
    • S. Sasaki, X-ray Absorption Coefficients of the Elements, National Laboratory of High Energy Physics, Oho 1-1, Tsukuba 305, Japan, 1990.
    • (1990) X-ray Absorption Coefficients of the Elements
    • Sasaki, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.