Physical and electrical characteristics of a high-k Yb 2 O 3 gate dielectric

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 4979-4982

  Pan, Tung Ming ^a   Huang, Wei Shiang ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silica; High k Yb 2 O 3; Postdeposition annealing treatment

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; HIGH-K DIELECTRIC; REACTIVE SPUTTERING; SILICA; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; YTTERBIUM COMPOUNDS;

AMORPHOUS SILICA; ANNEALING TEMPERATURES; CONSTANT VOLTAGE STRESS; ELECTRICAL CHARACTERISTIC; HIGH- K; HYSTERESIS VOLTAGE; POST DEPOSITION ANNEALING; STRUCTURAL FEATURE;

GATE DIELECTRICS;

EID: 60249085426     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.048     Document Type: Article

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