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Volumn 58, Issue 2, 2000, Pages 470-477

Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; LEAKAGE CURRENTS; PERMITTIVITY; SILICON; TANTALUM COMPOUNDS; THIN FILMS;

EID: 0034251288     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00207-4     Document Type: Article
Times cited : (28)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.