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Volumn 58, Issue 2, 2000, Pages 470-477
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Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CAPACITORS;
DEPOSITION;
ELECTRIC CONDUCTIVITY OF SOLIDS;
LEAKAGE CURRENTS;
PERMITTIVITY;
SILICON;
TANTALUM COMPOUNDS;
THIN FILMS;
HIGH DIELECTRIC CONSTANT THIN FILMS;
TANTALUM PENTOXIDE;
SEMICONDUCTING FILMS;
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EID: 0034251288
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(00)00207-4 Document Type: Article |
Times cited : (28)
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References (9)
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