Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Solid State Communications

Volumn 138, Issue 12, 2006, Pages 571-573

  Darmawan, P ^a   Yuan, C L ^a   Lee, P S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Dielectrics; High k; Rare earth

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CURRENT DENSITY; LEAKAGE CURRENTS; LUTETIUM COMPOUNDS; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS STRUCTURE; GATE DIELECTRICS; HIGH-K; LEAKAGE CURRENT DENSITY;

ULTRATHIN FILMS;

EID: 33745438664     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.05.003     Document Type: Article

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