Rare earth metal oxide gate thin films prepared by e-beam deposition

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 200-204

  Ohmi, S ^a   Akama, S ^a   Kikuchi, A ^a   Kashiwagi, I ^a   Ohshima, C ^a   Taguchi, J ^a   Yamamoto, H ^a   Kobayashi, C ^a   Sato, K ^a   Takeda, A ^a   Oshima, K ^a   Ishiwara, H ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DYSPROSIUM COMPOUNDS; LUTETIUM; METALS; OXIDE FILMS; RARE EARTH ELEMENTS; RARE EARTHS; RECONFIGURABLE HARDWARE;

DEPOSITION TEMPERATURES; E-BEAM DEPOSITION; ELECTRICAL CHARACTERISTIC; FREQUENCY DEPENDENCE; OPTIMUM PROCESS CONDITIONS; PHYSICAL CHARACTERISTICS; RARE EARTH OXIDE; RARE-EARTH METAL OXIDE;

DYSPROSIUM;

EID: 33646223121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967583     Document Type: Conference Paper

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