Temperature dependence of the current conduction mechanisms in Sm 2O3 thin films

Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

  Chang, Ingram Yin Ku ^a   Hwang, Yu Ren ^a   Juan, Pi Chun ^b   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC FILMS; DIELECTRIC MATERIALS; ELECTRIC EQUIPMENT; ELECTROLYSIS; EMISSION SPECTROSCOPY; MAGNETRON SPUTTERING; MOS CAPACITORS; MOS DEVICES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON; SPACE OPTICS; TEMPERATURE DISTRIBUTION; THICK FILMS; TUNNELING (EXCAVATION); X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM ELECTRODES; CONDUCTION MECHANISMS; CURRENT CONDUCTION MECHANISMS; DIELECTRIC PERMITTIVITIES; ELECTRICAL FIELDS; ELECTRON BARRIERS; ELECTRONIC MASSES; EQUIVALENT OXIDE THICKNESSES; INTERFACIAL LAYERS; RADIO FREQUENCIES; SCHOTTKY EMISSIONS; SEMICONDUCTOR CAPACITORS; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; THIN-FILMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

HEAT CONDUCTION;

EID: 54949120269     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2979141     Document Type: Article

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