Thickness and temperature dependence of dielectric reliability characteristics in cerium dioxide thin film

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2719-2725

  Chiu, Fu Chien ^a  

^a MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

CeO2; dielectric reliability; stress induced defect size; Weibull slope

Indexed keywords

ANALYTIC MODELS; CAPTURE CROSS SECTIONS; CELL-BASED; CEO2; CERIUM DIOXIDES; DIELECTRIC BREAKDOWN STRENGTH; DIELECTRIC RELIABILITY; DIELECTRIC THICKNESS; ROOM TEMPERATURE; STRESS-INDUCED; STRESS-INDUCED DEFECT SIZE; TEMPERATURE DEPENDENCE; WEIBULL SLOPE;

CAPACITORS; CERIUM; ELECTRIC BREAKDOWN; FILM THICKNESS; HAFNIUM COMPOUNDS; MAXIMUM LIKELIHOOD ESTIMATION; RELIABILITY; SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION; THIN FILMS;

DEFECTS;

EID: 77956998195     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2063310     Document Type: Article

References (32)

1. T. Yamamoto, H. Momida, T. Uda, and T. Ohno, "First-principles study of dielectric properties of cerium oxide," Thin Solid Films, vol. 486, no. 1/2, pp. 136-140, Aug. 2005.
2. N. V. Skorodumova, R. Ahuja, S. I. Simak, I. A. Abrikosov, B. Johansson, and B. I. Lundqvist, "Electronic, bonding, and optical properties of CeO2 and Ce2O3 from first principles," Phys. Rev. B, Condens. Matter, vol.64, no.11, p. 115 108, Sep. 2001.
3. F. C. Chiu, S. Y. Chen, C. H. Chen, H. W. Chen, H. S. Huang, and H. L. Hwang, "Interfacial and electrical characterization in metal-oxide- semiconductor field-effect transistors with CeO2 gate dielectric," Jpn. J. Appl. Phys., vol.48, no.4, p. 04C014, Apr. 2009.
4. L. Tye, N. A. El-Masry, T. Chikyow, and S. M. Bedair, "Electrical characteristics of epitaxial CeO2 on Si (111)," Appl. Phys. Lett., vol.65, no.24, pp. 3081-3083, Dec. 1994.
5. Y. Nishikawa, N. Fukushima, N. Yasuda, K. Nakayama, and S. Ikegawa, "Electrical properties of single crystalline CeO2 high-k gate dielectrics directly grown on Si (111)," Jpn. J. Appl. Phys., vol. 41, no. 4B, pp. 2480-2483, Apr. 2002.
6. B. De Salvo, C. Gerardi, R. van Schaijk, S. A. Lombardo, D. Corso, C. Plantamura, S. Serafino, G. Ammendola, M. van Duuren, P. Goarin, W. Y. Mei, K. van der Jeugd, T. Baron, M. Gely, P.Mur, and S. Deleonibus, "Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)," IEEE Trans. Device Mater. Rel., vol.4, no.3, pp. 377-389, Sep. 2004.
7. S. M. Yang, C. H. Chien, J. J. Huang, T. F. Lei, M. J. Tsai, and L. S. Lee, "Cerium oxide nanocrystals for nonvolatile memory applications," Appl. Phys. Lett., vol.91, no.26, p. 262104, Dec. 2007.
8. L. Kim, J. Kim, D. Jung, and Y. Roh, "Controllable capacitance-voltage hysteresis width in the aluminum-cerium-dioxide-silicon metal-insulator-semiconductor structure: Application to nonvolatile memory devices without ferroelectrics," Appl. Phys. Lett., vol.76, no.14, pp. 1881-1883, Apr. 2000.
9. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, and T. P. Ma, "Resistive switching in CeOx films for nonvolatile memory application," IEEE Electron Device Lett., vol.30, no.4, pp. 334-336, Apr. 2009.
10. C. Y. Lin, D. Y. Lee, S. Y.Wang, C. C. Lin, and T. Y. Tseng, "Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films," Surf. Coat. Technol., vol.203, no.5-7, pp. 480-483, Dec. 2008.
11. F. C. Chiu, "Current conduction mechanisms in CeO2 thin films," Electrochem. Solid-State Lett., vol.11, no.6, pp. H135-H137, 2008.
12. M. S. Rahman, E. K. Evangelou, I. I. Androulidakis, and A. Dimoulas, "Current transport mechanism in high-k cerium oxide gate dielectrics grown on germanium substrates," Electrochem. Solid-State Lett., vol.12, no.5, pp. H165-H168, 2009.
13. E. K. Evangelou, M. S. Rahman, and A. Dimoulas, "Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates," IEEE Trans. Electron Devices, vol.56, no.3, pp. 399-407, Mar. 2009.
14. M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, and S. Galata, "Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate," J. Appl. Phys., vol.103, no.6, p. 064 514, Mar. 2008.
15. F. C. Chiu and C. M. Lai, "Optical and electrical characterizations of cerium oxide thin films," J. Phys. D, Appl. Phys., vol.43, no.7, p. 075 104, Feb. 2010.
16. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. DEmic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-Å. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, "Ultrathin high-k gate stacks for advanced CMOS devices," in IEDM Tech. Dig., 2001, pp. 451-454.
17. E. L. Lehmann, Theory of Point Estimation. New York: Wiley, 1983.
18. A. Chatterjee, R. A. Chapman, G. Dixit, J. Kuehne, S. Hattangady, H. Yang, G. A. Brown, R. Aggarwal, U. Erdogan, Q. He, M. Hanratty, D. Rogers, S. Murtaza, S. J. Fang, R. Kraft, A. L. P. Rotondaro, J. C. Hu,M. Terry,W. Lee, C. Fernando, A. Konecni, G.Wells, D. Frystak, C. Bowen, M. Rodder, and I. C. Chen, "Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process," in IEDM Tech. Dig., 1997, pp. 821-824.
19. A. Chatterjee, R. A. Chapman, K. Joyner, M. Otobe, S. Hattangady, M. Bevan, G. A. Brown, H. Yang, Q. He, D. Rogers, S. J. Fang, R. Kraft, A. L. P. Rotodaro, M. Terry, K. Brennan, S. W. Aur, J. C. Hu, H. L. Tsai, P. Jones, G. Wilk, M. Aoki, M. Rodder, and I. C. Chen, "CMOS metal replacement gate transistors using tantalum pentoxide gate insulator," in IEDM Tech. Dig., 1998, pp. 777-780.
20. J. M. Hergenrother, G. D. Wilk, T. Nigam, F. P. Klemens, D. Monroe, P. J. Silverman, T. W. Sorsch, B. Busch, M. L. Green, M. R. Baker, T. Boone, M. K. Bude, N. A. Ciampa, E. J. Ferry, A. T. Fiory, S. J. Hillenius, D. C. Jacobson, R. W. Johnson, P. Kalavade, R. C. Keller, C. A. King, A. Kornblit, H. W. Krautter, J. T. C. Lee, W. M. Mansfield, J. F. Miner, M. D. Morris, S. H. Oh, J. M. Rosamilia, B. J. Sapjeta, K. Short, K. Steiner, D. A. Muller, P. M. Voyles, J. L. Grazul, E. J. Shero, M. E. Givens, C. Pomarede, M. Mazanec, and C. Werkhoven, "50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics," in IEDM Tech. Dig., 2001, pp. 51-54.
21. N. Klein and Z. Lizak, "Extended temperature range for the maximum dielectric strength," Proc. IEEE, vol.54, no.7, pp. 979-980, Jul. 1966.
22. S. M. Sze, "Current transport and maximum dielectric strength of silicon nitride films," J. Appl. Phys., vol.38, no.7, pp. 2951-2956, Jun. 1967.
23. J. J. ODwyer, The Theory of Electrical Conduction and Breakdown in Solid Dielectrics. Oxford, U.K.: Clarendon, 1973.
24. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," in IEDM Tech. Dig., 1995, pp. 863-866.
25. J. H. Stathis, "Percolation models for gate oxide breakdown," J. Appl. Phys., vol.86, no.10, pp. 5757-5766, Nov. 1999.
26. J. Sune, "New physics-based analytic approach to the thin-oxide breakdown statistics," IEEE Electron Device Lett., vol.22, no.6, pp. 296-298, Jun. 2001.
27. E. Y.Wu and J. Sune, "Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability," Microelectron. Reliab., vol.45, no.12, pp. 1809-1834, Dec. 2005.
28. C. H. Chen, I. Y. K. Chang, J. Y. M. Lee, F. C. Chiu, Y. K. Chiou, and T. B. Wu, "Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-k dielectric," Appl. Phys. Lett., vol.91, no.12, p. 123507, Sep. 2007.
29. E. K. Evangelou, M. S. Rahman, and A. Dimoulas, "Correlation of charge buildup and stress-induced leakage current in cerium oxide films grown on Ge (100) substrates," IEEE Trans. Electron Devices, vol.56, no.3, pp. 399-407, Mar. 2009.
30. S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, "Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress," Microelectron. Reliab., vol.46, no.1, pp. 69-76, Jan. 2006.
31. M. Houssa, A. Stesmans, M. Naili, and M. M. Heyns, "Charge trapping in very thin high-permittivity gate dielectric layers," Appl. Phys. Lett., vol.77, no.9, pp. 1381-1383, Aug. 2000.
32. K. C. Kao and W. Hwang, Electrical Transport in Solids. NewYork: Pergamon, 1981.