Charge trapping in and electrical properties of pulsed laser deposited Sm2O3 films

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 9389-9391

  Yang, Dongfang ^a   Xue, Li Jue ^a   Devine, R A B ^b,c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; HOLE MOBILITY; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS;

DIELECTRIC CAPACITANCES;

SEMICONDUCTING SAMARIUM COMPOUNDS;

EID: 0037974419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569660     Document Type: Article

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