Silicon MIS structures using samarium oxide films

Thin Solid Films

Volumn 325, Issue 1-2, 1998, Pages 151-155

  Rozhkov, V A ^a   Trusova, A Yu ^a   Berezhnoy, I G ^a  

^a SAMARA NATIONAL RESEARCH UNIVERSITY   (Russian Federation)

Author keywords

Band structure; Interfaces; Metal oxide semiconductor structure (MOS); Surface and interface states

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SAMARIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; THERMAL EFFECTS; THERMOOXIDATION;

METAL DIELECTRIC SEMICONDUCTOR (MIS) STRUCTURE; PHOTOINJECTION CURRENT;

DIELECTRIC FILMS;

EID: 0032115341     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00533-1     Document Type: Article

References (9)

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