Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

Materials Science in Semiconductor Processing

Volumn 13, Issue 4, 2010, Pages 245-251

  Jagadeesh Chandra, S V ^a   Choi, Chel Jong ^a   Uthanna, S ^b   Mohan Rao, G ^c  

^a Chonbuk National University   (South Korea)

^b SRI VENKATESWARA UNIVERSITY   (India)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Electrical properties; Metalinsulatorsemiconductor structure; Sputtering; Tantalum oxide

Indexed keywords

ANNEALED FILMS; CHEMICAL BINDING; DIELECTRIC CONSTANT VALUES; ELECTRICAL CONDUCTION MECHANISMS; ELECTRICAL PROPERTY; GATE BIAS VOLTAGE; METALINSULATORSEMICONDUCTOR STRUCTURE; POOLE-FRENKEL; POST DEPOSITION ANNEALING; RADIO FREQUENCIES; STRUCTURAL AND ELECTRICAL PROPERTIES;

ANNEALING; ELECTRIC PROPERTIES; MAGNETRONS; PERMITTIVITY; RADIO; RADIO WAVES; STRUCTURAL PROPERTIES; TANTALUM; TANTALUM OXIDES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 79952619576     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.08.002     Document Type: Article

References (37)

1. E. Atanassova Microelectron Reliab 39 1999 1185
2. A.I. Kingon, J.P. Maria, and S.K. Steiffer Nature 406 2000 1032
3. H.S. Nalwa Handbook of surfaces and interfaces of materials 2001 Academic Press San Diego, USA p. 439
4. S. Ezhilvalavan, and T.Y. Tseng J Mater Sci Mater Electron 10 1999 9
5. C Chaneliere, JL Autran, RAB Devine, and B. Balland Mater Sci Eng R 22 1998 269
6. AJ. Revesz COSMAT, Tech Rev 3 1973 449
7. AP Huang, and PK. Chu J Cryst Growth 274 2005 73
8. CC Lee, and DJ. Jan Thin Solid Films 483 2005 130
9. N Gallard, L Pinzelli, and M. Gros-Jean Appl Phys Lett 89 2006 133506
10. E Atanassova, G Aygun, R Turan, and Tz. Babeva J Vac Sci Technol A 24 2006 206
11. T Ono, K Kato, H Toyota, Y Fukuda, and Y. Jin Jpn J Appl Phys 45 2006 7345
12. SV Jagadeesh Chandra, G Mohan Rao, and S. Uthanna Cryst Res Technol 42 2007 290
13. SV Jagadeesh Chandra, S Uthanna, and G.Mohan Rao Appl Surf Sci 254 2008 1953
14. SV Jagadeesh Chandra, M Chandra Sekhar, G Mohan Rao, and S. Uthanna J Mater Sci Mater Electron 20 2009 295
15. S Uthanna, SV Jagadeesh Chandra, G Mohan Rao, and PF. Pierson IOP Conf Ser Mater Sci Eng 8 2010 012025
16. SV Jagadeesh Chandra, P Sreedhara Reddy, G Mohan Rao, and S. Uthanna Optoelectron Adv Mater Rapid Commun 1 2007 496
17. J. Huang Thin Solid Films 478 2005 332
18. CD. Wagner Handbook of X-ray photoelectron spectroscopy, Perkin Elmer Corp 1978 Eden Praire Minnesota
19. JP Chong, RL Opila, GB Alers, ML Steigerwald, HC Lu, and E. Gurfunkel Solid State Technol 42 1998 43
20. JCPDS International Center for Diffraction Data (1998), card no. 71-0639.
21. SI Kimura, Y Nishioka, A Shintani, and N. Mukai J Electrochem Soc 130 1983 2414
22. A Pignolet, G Mohan Rao, and SB. Krupanidhi Thin Solid Films 258 1995 230
23. T Dimitrova, K Arshak, and E. Atanassova Thin Solid Films 381 2001 31
24. ZJ Cheng, LD Tian, LY Zhen, and L. Zheng Trans Nonferrous Met Soc China 19 2009 359
25. G Mohan Rao, and SB. Kripanidhi J Appl Phys 75 1994 2604
26. SW Park, YK Baek, JY Lee, CO Park, and HB. Im J Eelectron Mater 21 1992 635
27. T Dimitrova, and E. Atanassova Solid State Electron 42 1998 307
28. T Riekkinen, and J. Molarius Microelectron Eng 70 2003 392
29. J Schmitz, FN Cubaynes, R de Kort, R Havens, AJ Scholten, and LF. Tiemeijer Microelectron Eng 72 2004 149
30. SM. Sze Semiconductor devices physics and technology 2nd ed 2002 John Wiley & Sons p. 494
31. E Atanasova, M Kalitzova, G Zollo, A Paskaleva, A Peeva, and M. Georgieva Thin Solid Films 426 2003 191
32. Y Nishioka, N Homma, H Shinriki, K Mukai, K Yamaguchi, and A. Uchida IEEE Trans Electron Dev 34 1987 1957
33. JG. Simmons Phys Rev 155 1967 657
34. SJ Wu, B Houng, and B. Huang J. Alloys Compd 475 2009 488
35. CH Lu, CH Wu, and J. Euro Ceram Soc 26 2006 2753
36. X He, J Wu, X Li, X Gao, X Gan, and L. Zhao J Alloys Compd 478 2009 453
37. M Hiratani, S Kimura, T Hamada, S Iijima, and N. Nakanishi Appl Phys Lett 81 2002 2433